PTFA092211EL Datasheet, PDF (3/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz

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Typical Performance (data taken in a production test fixture)
PTFA092211EL
PTFA092211FL
CW Performance
Gain & Efficiency vs. Output Power
V_DD = 30 V, I_DQ = 1.75 A, ƒ = 940 MHz
20
60
19
50
Gain
18
40
17
30
16
20
15
14
35
Efficiency
40
45
50
Output Power (dBm)
10
0
55
CW Performance
Gain & Efficiency vs. Output Power
V_DD = 30 V, I_DQ = 1.75 A, ƒ = 940 MHz
20
T_CASE = 25°C
19 _{TCASE = 90°C}
18
60
Efficiency
50
40
17
30
Gain
16
20
15
10
14
0
35
40
45
50
55
Output Power (dBm)
Two-tone Broadband Performance
Gain, Efficiency & Return Loss vs. Frequency
V_DD = 30 V, I_DQ = 1.75 A, P_OUT = 110 W
45
-5
40
Efficiency
-10
35
-15
30
Return Loss
-20
25
-25
20
Gain
-30
15
-35
900 910 920 930 940 950 960 970 980
Frequency (MHz)
Power Sweep, CW
V_DD = 30 V, ƒ = 940 MHz
19
18 I_DQ = 2.0 A
I_DQ = 1.6 A
17
I_DQ = 1.2 A
16
30
35
40
45
50
55
Output Power (dBm)
Data Sheet
3 of 10
Rev. 02, 2009-05-27