PTF140451E Datasheet, PDF (8/9 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1450 - 1550 MHz

Package Outline Specifications (cont.)
Package 31265
(45° X 2.03
[.080])
2X 2.59±0.51
[.102±.020]
D
LID 10.16±0.25
[.400±.010]
FLANGE 10.16
[.400]
PTF140451E
PTF140451F
10.16
[.400]
15.49±.51
[.610±.020]
R1.27
[R.050]
G
2X 7.11
[.280]
4X R0.63
[R.025] MAX
SPH 1.57
[.062]
10.16±0.25
[.400±.010]
3.56±.38
[.140±.015]
S
10.16
[.400]
1.02
[.040]
0.025 [.001] -A-
265-cases_31265
Diagram Notes:
1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
2. All tolerances ± 0.127 [.005] unless specified otherwise.
3. Pins: D = drain, S = source, G = gate.
4. Interpret dimensions and tolerances per ASME Y14.5M-1994.
5. Primary dimensions are mm. Alternate dimensions are inches.
6. Gold plating thickness:
S - flange: 2.54 micron [100 microinch] (min)
D, G - leads: 1.14 micron ± 0.38 micron [45 microinch ± 15 microinch]
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Data Sheet
8 of 9
Rev. 02, 2005-11-01