PTF140451E Datasheet, PDF (1/9 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1450 - 1550 MHz

PTF140451E
PTF140451F
Thermally-Enhanced High Power RF LDMOS FETs
45 W, 1450 – 1550 MHz
Description
The PTF140451E and PTF140451F are 45-watt, GOLDMOS ^®
FETs intended for DAB applications. These devices are
characterized for Digital Audio Broadcast operation in the 1450 to
1550 MHz band. Thermally-enhanced packages provide the
coolest operation available. Full gold metallization ensures
excellent device lifetime and reliability.
PTF140451E
Package 30265
PTF140451F
Package 31265
DAB Mode 2 Drive-up at 28 V
V_DD = 28 V, I_DQ = 550 mA, ƒ = 1500 MHz
-22
30
Drain Efficiency
-26
26
-30
22
-34
18
-38
-42
34
Regrowth
35 36 37 38 39 40 41
Output Power, avg. (dBm)
14
10
42
RF Characteristics
Features
• Thermally-enhanced packages
• Broadband internal matching
• Typical DAB Mode 2 performance at 1500 MHz, 28 V
- Average output power = 12.5 W
- Efficiency = 27.5%
- Spectral regrowth = –30 dBc
- ∆ 975 kHz ƒ_C
• Typical DAB Mode 2 performance at 1500 MHz, 32 V
- Average output power = 15.5 W
- Efficiency = 27%
- Spectral regrowth = –30 dBc
- ∆ 975 kHz ƒ_C
• Typical CW performance, 1500 MHz, 28 V
- Output power = 60 W
- Linear gain = 18 dB
- Efficiency = 54% at P–1dB
• Integrated ESD protection: Human Body Model,
Class 1 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR at 28 V, 45 W (CW)
output power
• Pb-free and RoHS compliant
DAB Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
V_DD = 28 V, I_DQ = 550 mA, P_OUT = 12.5 W_AVG, ƒ = 1500 MHz, DAB Mode 2, ∆ 975 kHz ƒ_C
Characteristic
Symbol Min Typ Max
Spectral Regrowth
RGTH
—
–30
—
Gain
Drain Efficiency
G_{p s}
—
18
—
η_D
—
27.5
—
Unit
dBc
dB
%
All published data at T_CASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 9
Rev. 02, 2005-11-01