PTF140451E Datasheet, PDF (4/9 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1450 - 1550 MHz

Typical Performance (cont.)
DAB Mode 2 Drive-up at 32 V
I_DQ = 550 mA, ƒ = 1500 MHz
-22
30
Drain Efficiency
-26
26
-30
22
-34
18
-38
-42
35
Regrowth
36 37 38 39 40 41 42
Output Power, avg. (dBm)
14
10
43
PTF140451E
PTF140451F
Gate-Source Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current.
1.03
1.02
1.01
1.00
0.99
0.98
0.30 A
1.10 A
2.00 A
2.85 A
3.75 A
4.50 A
0.97
0.96
0.95
-20
0
20 40 60 80 100
Case Temperature (ºC)
Broadband Circuit Impedance
D
Z Source
Z Load
Z₀ = 50 Ω
G
S
Frequency
MHz
1400
1450
1500
1550
1600
Z Source Ω
R
jX
9.1
–2.65
9.1
–1.81
9.3
–0.98
9.5
0.15
9.9
0.60
Z Load Ω
R
jX
4.20
–3.70
4.10
–3.50
4.10
–2.90
4.00
–2.70
4.00
–2.20
Z Source
Z Load
1600 MHz
1400 MHz
0. ¹
1600 MHz
1400 MHz
0.2
Data Sheet
4 of 9
Rev. 02, 2005-11-01