PTF140451E Datasheet, PDF (2/9 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1450 - 1550 MHz

PTF140451E
PTF140451F
RF Characteristics (cont.)
Two-Tone Measurements (tested in Infineon test fixture)
V_DD = 28 V, I_DQ = 550 mA, P_OUT = 45 W_PEP, ƒ = 1500 MHz, tone spacing = 1 MHz
Characteristic
Symbol Min Typ
Gain
Drain Efficiency
Intermodulation Distortion
G_{p s}
η_D
IMD
17
18
35
36.5
—
–32
Max
—
—
–30
Unit
dB
%
dBc
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V_GS = 0 V, I_D = 10 µA
V_DS = 28 V, V_GS = 0 V
V_GS = 10 V, V_DS = 0.1 V
V_DS = 28 V, I_DQ = 550 mA
V_GS = 10 V, V_DS = 0 V
Symbol
V_(BR)DSS
I_DSS
R_DS(on)
V_{G S}
I_GSS
Min
65
—
—
2.5
—
Typ
—
—
0.02
3.3
—
Max
—
1.0
—
4.0
1.0
Unit
V
µA
Ω
V
µA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C)
Ordering Information
Type
PTF140451E
PTF140451F
Package Outline
30265
31265
Symbol
V_{D S S}
V_{G S}
T_J
P_D
T_STG
R_θJC
Value
65
–0.5 to +12
200
175
1.0
–40 to +150
1.0
Unit
V
V
°C
W
W/°C
°C
°C/W
Package Description
Marking
Thermally-enhanced slotted flange, single-ended PTF140451E
Thermally-enhanced earless flange, single-ended PTF140451F
*See Infineon distributor for future availability.
Data Sheet
2 of 9
Rev. 02, 2005-11-01