PTF140451E Datasheet, PDF (3/9 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1450 - 1550 MHz

Typical Performance
CW Power Sweep (P–1dB)
V_DD = 28 V, I_DQ = 550 mA, ƒ = 1500 MHz
20
T_CASE = 25°C
60
T_CASE = 90°C
19
50
18 _Gain
40
17
30
Drain Efficiency
16
20
15
0
10 20 30 40 50
Output Power (W)
10
60
PTF140451E
PTF140451F
CW Sweep in a Broadband Test Fixture
V_DD = 28 V, I_DQ = 550 mA, P _OUT (CW) = 12 W
45
40
35
30
25
20
15
10
1400
0
Return Loss ^-5
-10
-15
-20
Drain Efficiency
-25
-30
Gain
-35
1450
1500
1550
-40
1600
Frequency (MHz)
3rd Order Intermodulation Distortion
vs. Output Power for Various I_DQ
V_DD = 28, ƒ = 1500 MHz, tone spacing = 1 MHz
-25
-30
I_DQ = 500 mA
-35
I_DQ = 550 mA
I_DQ = 650 mA
-40
-45
-50
-55
-60
I_DQ = 450 mA
I_DQ = 600 mA
-65
32 34 36 38 40 42 44 46 48
Output Power, PEP (dBm)
2-Tone Drive-up at Optimum Current
V_DD = 28 V, I_DQ = 550 mA, ƒ = 1500 MHz,
tone spacing = 1 MHz
-25
45
-35
3rd Order
-45
5th
-55
Drain Efficiency
35
25
15
7th
-65
5
32
36
40
44
48
Output Power, PEP (dBm)
Data Sheet
3 of 9
Rev. 02, 2005-11-01