BTN7963B Datasheet, PDF (8/26 Pages) Infineon Technologies AG – High Current PN Half Bridge NovalithIC

High Current PN Half Bridge
BTN7963B
General Product Characteristics
4.2
Functional Range
Pos. Parameter
4.2.1
4.2.2
4.2.3
Supply Voltage Range for
Normal Operation
Extended Supply Voltage Range
for Operation
Junction Temperature
Symbol
Limit Values
Min.
Max.
V_S(nor)
8
18
V_S(ext)
V_UV(OFF)max 28
T_j
-40
150
Unit Conditions
V
–
V
Parameter
Deviations possible
°C –
Note: Within the functional or operating range, the IC operates as described in the circuit description. The electrical
characteristics are specified within the conditions given in the Electrical Characteristics table.
4.3
Thermal Resistance
Pos. Parameter
Symbol
Limit Values
Unit Conditions
Min. Typ. Max.
4.3.1
4.3.2
4.3.3
4.3.4
Thermal Resistance
Junction-Case, Low Side Switch¹⁾
R_thjc(LS) = ΔT_j(LS)/ P_v(LS)
Thermal Resistance
Junction-Case, High Side Switch¹⁾
R_thjc(HS) = ΔT_j(HS)/ P_v(HS)
Thermal Resistance
Junction-Case, both Switches¹⁾
R_thjc = max[ΔT_j(HS), ΔT_j(LS)] /
(P_v(HS) + P_v(LS))
Thermal Resistance
Junction-Ambient¹⁾
R_thJC(LS) –
R_thJC(HS) –
R_thJC
–
R_thJA
–
1.3 1.8 K/W –
0.6 0.9 K/W –
0.7 1.0 K/W –
20
–
K/W ²⁾
1) Not subject to production test, specified by design
2) Specified R_thJA value is according to Jedec JESD51-2,-5,-7 at natural convection on FR4 2s2p board; The Product
(Chip+Package) was simulated on a 76.2 x 114.3 x 1.5 mm board with 2 inner copper layers (2 x 70µm Cu, 2 x 35µm Cu).
Where applicable a thermal via array under the exposed pad contacted the first inner copper layer.
Data Sheet
8
Rev. 1.0, 2009-09-09