BTN7963B Datasheet, PDF (22/26 Pages) Infineon Technologies AG – High Current PN Half Bridge NovalithIC

High Current PN Half Bridge
BTN7963B
Application Information
6
Application Information
Note: The following information is given as a hint for the implementation of the device only and shall not be
regarded as a description or warranty of a certain functionality, condition or quality of the device.
6.1
Application Example
Microcontroller
Voltage Regulator
Reverse Polarity
Protection
XC866
I/O I/O I/O
I/O
Reset
V dd
C
Q
22µF
I/O ^Vss
C
D
47nF
WO _{TLE I}
RO _4278G
Q
D _GND
D
Z1
10V
C_S
470µF
R₁
10kΩ
V_S
e.g.
IPD80P03P4L
-07
R R _IN1
INH1
10kΩ 10kΩ
BTN7963B
VS
INH
IN
IS
OUT
SR
R_{IS 12}
470Ω
R_SR1
0..51kΩ
GND
C_Sc1
470nF
C_Sc2
470nF
M
BTN7963B
VS
INH
IN
OUT
IS
SR
GND
R_INH2
R_IN2
10kΩ 10kΩ
R_SR2
0..51kΩ
High Current H-Bridge
Figure 14 Application Example: H-Bridge with two BTN7963B
Note: This is a simplified example of an application circuit. The function must be verified in the real application.
6.2
Layout Considerations
Due to the fast switching times for high currents, special care has to be taken to the PCB layout. Stray inductances
have to be minimized in the power bridge design as it is necessary in all switched high power bridges. The
BTN7963B has no separate pin for power ground and logic ground. Therefore it is recommended to assure that
the offset between the ground connection of the slew rate resistor, the current sense resistor and ground pin of
the device (GND / pin 1) is minimized. If the BTN7963B is used in a H-bridge or B6 bridge design, the voltage
offset between the GND pins of the different devices should be small as well.
A ceramic capacitor from VS to GND close to each device is recommended to provide current for the switching
phase via a low inductance path and therefore reducing noise and ground bounce. A reasonable value for this
capacitor would be about 470 nF.
The digital inputs need to be protected from excess currents (e.g. caused by induced voltage spikes) by series
resistors in the range of 10 kΩ.
Data Sheet
22
Rev. 1.0, 2009-09-09