BTN7963B Datasheet, PDF (7/26 Pages) Infineon Technologies AG – High Current PN Half Bridge NovalithIC

High Current PN Half Bridge
BTN7963B
General Product Characteristics
Absolute Maximum Ratings (cont’d)¹⁾
T_j = -40 °C to +150 °C; all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos. Parameter
Symbol
Limit Values
Unit Conditions
Min.
Max.
ESD Susceptibility
4.1.12
ESD Resistivity HBM
IN, INH, SR, IS
OUT, GND, VS
V_ESD
-2
-6
kV
HBM⁴⁾
2
6
1) Not subject to production test, specified by design
2) V_S(LD) is setup without the DUT connected to the generator per ISO7637-1; R_i is the internal resistance of the load dump
test pulse generator; t_d is the pulse duration time for load dump pulse (pulse 5) according ISO 7637-1, -2.
3) Maximum reachable current may be smaller depending on current limitation level
4) ESD susceptibility, HBM according to EIA/JESD22-A114-B (1.5 kΩ, 100 pF)
Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are
not designed for continuous repetitive operation.
Maximum Single Pulse Current
100
90
80
70
60
50
40
30
20
10
0
1,0E-03
1,0E-02
1,0E-01
t _pulse[s]
1,0E+00
1,0E+01
Figure 4 BTN7963B Maximum Single Pulse Current (T_C < 85°C)
This diagram shows the maximum single pulse current that can be driven for a given pulse time t_pulse. The
maximum reachable current may be smaller depending on the current limitation level. Pulse time may be limited
due to thermal protection of the device.
Data Sheet
7
Rev. 1.0, 2009-09-09