BTN7963B Datasheet, PDF (10/26 Pages) Infineon Technologies AG – High Current PN Half Bridge NovalithIC

High Current PN Half Bridge
BTN7963B
Block Description and Characteristics
5.2
Power Stages
The power stages of the BTN7963B consist of a p-channel vertical DMOS transistor for the high side switch and
a n-channel vertical DMOS transistor for the low side switch. All protection and diagnostic functions are located in
a separate top chip. Both switches can be operated up to 25 kHz, allowing active freewheeling and thus minimizing
power dissipation in the forward operation of the integrated diodes.
The on state resistance R_ON is dependent on the supply voltage V_S as well as on the junction temperature T_j. The
typical on state resistance characteristics are shown in Figure 6.
High Side Switch
25
20
Low Side Switch
25
20
15
15
T_j = 150°C
10
5
4
T_j = 150°C
T_j = 25°C
T_j = -40°C
8
12
16 20 24 28
V_S [V]
10
5
4
Figure 6 Typical ON State Resistance vs. Supply Voltage
T_j = 25°C
T_j = -40°C
8
12
16 20 24 28
V_S [V]
Data Sheet
10
Rev. 1.0, 2009-09-09