BTN7963B Datasheet, PDF (3/26 Pages) Infineon Technologies AG – High Current PN Half Bridge NovalithIC

High Current PN Half Bridge
NovalithIC™
BTN7963B
1
Overview
Features
• Path resistance of max. 30.5 mΩ @ 150 °C (typ. 16 mΩ @ 25 °C)
High Side: max. 12.8 mΩ @ 150 °C (typ. 7 mΩ @ 25 °C)
Low Side: max. 17.7 mΩ @ 150 °C (typ. 9 mΩ @ 25 °C)
• Enhanced switching speed for reduced switching losses
(rise/fall times down to typ. 550ns)
• Extended operating voltage range down to 4.5 V (high side switch)
• Low quiescent current of typ. 7 μA @ 25 °C
• PWM capability of up to 25 kHz combined with active freewheeling
• Switched mode current limitation for reduced power dissipation
in overcurrent
• Current limitation level of 33 A min. / 47 A typ. (low side)
• Status flag diagnosis with current sense capability
• Overtemperature shut down with latch behaviour
• Smart clamping in overvoltage
• Undervoltage shut down
• Driver circuit with logic level inputs
• Adjustable slew rates for optimized EMI
• Operation up to 28V
• Green Product (RoHS compliant)
• AEC Qualified
PG-TO263-7-1
Description
The BTN7963B is an integrated high current half bridge for motor drive applications. It is part of the NovalithIC™
family containing one p-channel highside MOSFET and one n-channel lowside MOSFET with an integrated driver
IC in one package. Due to the p-channel highside switch the need for a charge pump is eliminated thus minimizing
EMI. Interfacing to a microcontroller is made easy by the integrated driver IC which features logic level inputs,
diagnosis with current sense, slew rate adjustment, dead time generation, smart clamping in overvoltage, and
protection against overtemperature, undervoltage, overcurrent and short circuit.
The BTN7963B provides a cost optimized solution for protected high current PWM motor drives with very low
board space consumption.
Type
BTN7963B
Data Sheet
Package
PG-TO263-7-1
3
Marking
BTN7963B
Rev. 1.0, 2009-09-09