SGW25N120_09 Datasheet, PDF (7/11 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation

SGW25N120
25mJ
*) Eon and Ets include losses
due to diode recovery.
E_ts*
20mJ
15mJ
E_on*
10mJ
E_off
5mJ
0mJ
0A
20A
40A
60A
I_C, COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, T_j = 150°C,
V_CE = 800V, V_GE = +15V/0V, R_G = 22 Ω,
dynamic test circuit in Fig.E )
8mJ
*) Eon and Ets include losses
due to diode recovery.
E_ts*
6mJ
4mJ
2mJ
E_on*
E_off
0mJ
-50°C 0°C
50°C 100°C 150°C
T_j, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, V_CE = 800V,
V_GE = +15V/0V, I_C = 25A, R_G = 2 2Ω,
dynamic test circuit in Fig.E )
10mJ
*) Eon and Ets include losses
due to diode recovery.
E_ts*
8mJ
6mJ
4mJ
E_on*
E_off
2mJ
0mJ
0Ω 10Ω 20Ω 30Ω 40Ω 50Ω
R_G, GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, T_j = 150°C,
V_CE = 800V, V_GE = +15V/0V, I_C = 25A,
dynamic test circuit in Fig.E )
D=0.5
10^-1K/W ^0.2
0.1
0.05
10^-2K/W 0.02
0.01
R,(K/W)
0.07417
0.20899
0.08065
0.03681
R1
τ, (s)
0.4990
0.08994
0.00330
0.00038
R2
single pulseC₁=τ₁/R₁ C₂=τ₂/R₂
10^-3K/W
1µs 10µs 100µs 1ms 10ms 100ms 1s
t_p, PULSE WIDTH
Figure 16. IGBT transient thermal
impedance as a function of pulse width
(D = t_p / T)
Power Semiconductors
7
Rev. 2.5 Nov. 09