SGW25N120_09 Datasheet, PDF (4/11 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation

SGW25N120
100A
I_c
80A
60A
T_C=80°C
40A
T_C=110°C
20A
I_c
0A
10Hz
100Hz
1kHz
10kHz 100kHz
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(T_j ≤ 150°C, D = 0.5, V_CE = 800V,
V_GE = +15V/0V, R_G = 22Ω)
350W
300W
250W
200W
150W
100W
50W
0W
25°C 50°C 75°C 100°C 125°C
T_C, CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature
(T_j ≤ 150°C)
100A
10A
1A
0.1A
t_p=1µs
15µs
50µs
200µs
1ms
DC
1V
10V
100V
1000V
V_CE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, T_C = 25°C, T_j ≤ 150°C)
60A
50A
40A
30A
20A
10A
0A
25°C 50°C 75°C 100°C 125°C
T_C, CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(V_GE ≤ 15V, T_j ≤ 150°C)
Power Semiconductors
4
Rev. 2.5 Nov. 09