SGW25N120_09 Datasheet, PDF (6/11 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation

SGW25N120
1000ns
t_d(off)
t_f
100ns
t_d(on)
t_r
10ns
0A
20A
40A
60A
I_C, COLLECTOR CURRENT
Figure 9. Typical switching times as a
function of collector current
(inductive load, T_j = 150°C,
V_CE = 800V, V_GE = +15V/0V, R_G = 22 Ω,
dynamic test circuit in Fig.E )
1000ns
t_d(off)
100ns
t_d(on)
t_r
t_f
10ns
-50°C 0°C
50°C 100°C 150°C
T_j, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, V_CE = 800V,
V_GE = +15V/0V, I_C = 25A, R_G = 2 2Ω,
dynamic test circuit in Fig.E )
1000ns
t_d(off)
100ns
t_f
t_r
t_d(on)
10ns
0Ω
10Ω 20Ω 30Ω 40Ω 50Ω
R_G, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, T_j = 150°C,
V_CE = 800V, V_GE = +15V/0V, I_C = 25A,
dynamic test circuit in Fig.E )
6V
5V
4V
max.
typ.
3V
min.
2V
1V
0V
-50°C 0°C
50°C 100°C 150°C
T_j, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(I_C = 0.3mA)
Power Semiconductors
6
Rev. 2.5 Nov. 09