SGW25N120_09 Datasheet, PDF (5/11 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation

SGW25N120
80A
70A
60A
V_GE=17V
50A
15V
13V
40A
11V
9V
30A
7V
20A
10A
0A
0V 1V 2V 3V 4V 5V 6V 7V
V_CE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics
(T_j = 25°C)
80A
70A
60A
V_GE=17V
50A
15V
13V
40A
11V
9V
30A
7V
20A
10A
0A
0V 1V 2V 3V 4V 5V 6V 7V
V_CE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristics
(T_j = 150°C)
80A
70A
60A
50A
T_j=+150°C
40A
T_j=+25°C
30A ^Tj=-40°C
20A
10A
0A
3V 4V 5V 6V 7V 8V 9V 10V 11V
V_GE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristics
(V_CE = 20V)
6V
5V
I_C=50A
4V
I_C=25A
3V
I_C=12.5A
2V
1V
0V
-50°C 0°C
50°C 100°C 150°C
T_j, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(V_GE = 15V)
Power Semiconductors
5
Rev. 2.5 Nov. 09