SGW25N120_09 Datasheet, PDF (10/11 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation

Figure A. Definition of switching times
SGW25N120
i,v
di /dt
F
I
F
I
rrm
t =t +t
rr S F
Q =Q +Q
rr
S
F
t
rr
t
t
S
F
QQ
S
F
10% I
t
rrm
di /dt V
90% I ^{r r}
R
rrm
Figure C. Definition of diodes
switching characteristics
τ₁
r₁
T_j (t)
p(t)
r₁
τ₂
r₂
r₂
τ_n
r_n
r_n
T_C
Figure D. Thermal equivalent
circuit
Figure B. Definition of switching losses
Figure E. Dynamic test circuit
Leakage inductance L_σ =180nH,
and stray capacity C_σ =40pF.
Power Semiconductors
10
Rev. 2.5 Nov. 09