PTFB213004F Datasheet, PDF (7/16 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 300 W, 2110-2170 MHz

PTFB213004F
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
TL133
TL147
C801
1000 pF
S3
8
In
1
Out
NC
4
23
NC
5
67
C803
1000 pF
R802
1200 Ohm
2C
1
4
S 2 ^S
B
3E
R804
1300 Ohm
C802
1000 pF
R805
100 Ohm
S1
R801
10 Ohm
3
R803
10 Ohm
VGS 1
RF IN
TL156
TL157
1
2
3
C104
0.7 pF
TL108
er = 3.48
H = 20 mil
RO/RO4350B1
TL134
2
TL140 3
1
TL135
R106
10 Ohm
TL130
TL138
1
2
3
TL128
TL114
TL153
2
TL160 ³
1
TL115
C111
100000 pF
TL163
2
TL141 3
1
TL136
C112
4700000 pF
TL102
C103
8.2 pF
TL155 TL148 TL107
TL118
2
TL161 3
1
TL119
C102
4700000 pF
TL110
TL158
1
3
2
TL109
TL129
C109
10 pF
C113
0.6 pF
TL122
R104
0 Ohm
TL169
C106
10 pF
TL112
TL101 TL143
TL151
TL154
TL165
TL167
3
1
2
TL127
TL166 TL106 TL159
3
2
1
TL152
GATE 1
DUT
C105
10 pF
TL111
TL149 TL145 TL150 TL117
TL171
TL168
1
2
3
TL144
TL105
TL162
1
2
3
TL104
GATE 2
DUT
TL164
2
TL139 3
1
TL131
C101
100000 pF
TL132
2
TL142 ³
1
TL121
R107
10 Ohm
TL123
C110
10 pF
TL124
TL137
3
2
1
TL125
TL170
C114
0.6 pF
TL126
R105
0 Ohm
TL120
TL113
b 21300f4_b din _08 -09-2010
TL103
TL146
TL116
Reference circuit input schematic for ƒ = 2170 MHz
Data Sheet
7 of 16
Rev. 05.2, 2010-12-09