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PTFB213004F Datasheet, PDF (6/16 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 300 W, 2110-2170 MHz | |||
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Confidential, Limited Internal Distribution
Typical Performance (cont.)
PTFB213004F
Output PAR Compression (PARC),
2110 MHz
VDD = 30 V, IDQ = 2.4 A, Æ = 2110 MHz,
single-carrier 3GPP WCDMA signal,
input PAR = 7.5 dB, 3.84 MHz BW
20
60
Single-carrier Broadband Performance
VDD = 30 V, IDQ = 2.4 A, POUT = 89 W,
single-carrier 3GPP WCDMA signal
40
0
Gain
40
35 Efficiency
-5
15
30
20
-10
Efficiency
0
25
IRL
-15
10
PARC @ .01% CCDF
20 Gain
-20
db213004-20f-v1_2sgr15 Jan. 29, 2010 2:30:00 PM-25
5
-40
10
PARC
ACP
-30
0
ACP ptfb2--860013004f05-v1
-35
-40
36
40
44
48
52
56
2060
2100
2140
2180
2220
Output Power, avg. (NdBmo)rnalized to 50 Ohms
Frequency (MHz)
Graph #2
Broadband Circuit Impedance
Frequency
MHz
2080
2090
2100
2110
2120
2130
2140
2150
2160
2170
2180
2190
2200
Z Source W
R
jX
1.55
â4.57
1.54
â4.52
1.52
â4.48
1.51
â4.44
1.50
â4.40
1.48
â4.36
1.47
â4.32
1.46
â4.28
1.45
â4.24
1.43
â4.20
1.42
â4.17
1.41
â4.13
1.40
â4.09
Z Load W
R
jX
0.71
â2.91
0.71
â2.89
0.70
â2.86
0.70
â2.84
0.70
â2.81
0.70
â2.79
0.70
â2.77
0.70
â2.74
0.69
â2.72
0.69
â2.70
0.69
â2.67
0.69
â2.65
0.69
â2.63
Z Source
G
G
D Z Load
S
D
Z0 = 50 â¦
Z Load
2080 MHz
2200 MHz
2200 MHz
2080 MHz
Z Source
0.1
Data Sheet
6 of 16
Rev. 05.2, 2010-12-09
0. 2
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