PTFB213004F Datasheet, PDF (4/16 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 300 W, 2110-2170 MHz

Confidential, Limited Internal Distribution
Typical Performance (cont.)
Two-tone Drive-up
V_DD = 30 V, I_DQ = 2.4 A,
ƒ₁ = 2170 MHz, ƒ2 = 2169 MHz
-20
50
-30
40
-40
IMD 3
-50
30
Efficiency
20
-60
10
-70
38
43
48
53
Output Power, PEP (dBm)
0
58
PTFB213004F
Gain & Efficiency vs. Output Power
V_DD = 30 V, I_DQ = 2.4 A, ƒ = 2170 MHz
19.0
18.5
18.0
17.5
17.0
39
Gain
Efficiency
43
47
51
Output Power (dBm)
45
40
35
30
25
20
15
10
5
0
55
Two-tone Drive-up (over temp)
(P_OUT max 3rd order IMD @ –30dBc)
V_DD = 30 V, I_DQ = 2.4 A,
ƒ₁ = 2140.5 MHz, ƒ₂ = 2139.5 MHz
21
60
+25°C
20 +85°C
50
–30°C
19
40
18 _Gain
30
17
20
16
10
Efficiency
15
0
36
40
44
48
52
Output Power (dBm)
Two-tone IMD vs. Output Power
V_DD = 30 V, I_DQ = 2.4 A,
tone spacing = 1 MHz
-15
-25
2170 MHz
2140 MHz
-35
2110 MHz
-45
-55
-65
-75
39
43
47
51
55
Output Power, Avg. (dBm)
Data Sheet
4 of 16
Rev. 05.2, 2010-12-09