PTFB213004F Datasheet, PDF (2/16 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 300 W, 2110-2170 MHz

PTFB213004F
Confidential, Limited Internal Distribution
RF Characteristics (cont.)
Two-tone Measurements (not subject to production test—verified by design / characterization in Infineon test fixture)
V_DD = 30 V, I_DQ = 2.4 A, P_OUT = 250 W PEP, ƒ = 2140 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol Min Typ
G_ps
—
18
hD
—
37
IMD
—
–30
Max
—
—
—
Unit
dB
%
dBc
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current

On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V_GS = 0 V, I_DS = 10 µA
V_DS = 30 V, V_GS = 0 V
V_DS = 63 V, V_GS = 0 V
V_GS = 10 V, V_DS = 0.1 A
V_DS = 30 V, I_DQ = 2.4 A
V_GS = 10 V, V_DS = 0 V
Symbol
V_(BR)DSS
I_DSS
I_DSS
R_DS(on)
V_GS
I_GSS
Min
65
—
—
—
2.3
—
Typ
—
—
—
0.03
2.8
—
Max
—
1.0
10.0
—
3.3
1.0
Unit
V
µA
µA
W
V
µA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C )
Symbol Value
V_DSS –0.5 to +65
V_GS –6 to +10
T_J
200
T_STG –40 to +150
R_qJC
0.23
Unit
V
V
°C
°C
°C/W
Ordering Information
Type and Version
PTFB213004F V2
Package Outline
H-37275-6/2
PTFB213004F V2 R250 H-37275-6/2
Package Description
Thermally-enhanced earless flange
Thermally-enhanced earless flange
Shipping
Tray
Tape & Reel
Data Sheet
2 of 16
Rev. 05.2, 2010-12-09