PTFB213004F Datasheet, PDF (15/16 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 300 W, 2110-2170 MHz

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Package Outline Specifications
Package H-37275-6/2
PTFB213004F
2X 45° X 1.19
[45° X .047]
2X 30°
V1
D1
13.716
[.540]
CL
31.750
[1.250]
2X 2.032
[.080]
REF
D2
9.398
[.370]
4X
R0.508
+.381
-.127
[ ] ^R.020
+.015
-.005
2.134
[.084] SPH
1.626
[0.064]
G1
CL
31.242±0.280
[1.230±.011]
CL
G2
CL
4X 11.684
[.460]
2X 3.175
[.125]
2X 1.143
[.045]
V2
3.226±0.508
[.127±.020]
CL _9.144
[.360]
10.160
[.400]
16.612±.500
[.654±.020]
4.585+-00.1.22570
[ ] ^.180
+.010
-.005
32.258
[1.270]
h- 37275- 6-2_po _07-21- 2010
S
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [.005] unless specified otherwise.
4. Pins: G1, G2 = gate; D1, D2 = drain; S = source; V1, V2 = V_DD.
5. Lead thickness: 0.127 ± 0.051 [.005 ±.002].
6. Gold plating thickness: 1.1 ± 0.38 micron [45 ± 15 microinch].
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http://www.infineon.com/rfpower
Data Sheet
15 of 16
Rev. 05.2, 2010-12-09