PTFB192503EFL Datasheet, PDF (7/15 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs

PTFB192503EL/FL_INPUT
PTFB192503EL
PTFB192503FL
Reference Circuit
C802
1000 pF
S2
8
In
1
Out
NC
NC
4
2 36
75
C803
1000 pF
R801
100 Ohm
C801
1000 pF
R805
1200 Ohm
S3
2C
1
4
B
S
S1
R804
1300 Ohm
3E
R802
10 Ohm
R803
10 Ohm
3
TL110
RF_IN
er = 3.48
H = 30 mil
RO/RO4350B1
TL112
2
TL127 ³
1
TL121
R101
10 Ohm TL118
TL108
1
2
3
TL113
2
TL128 ³
1
C105
2200000 pF
TL115
C107
8.2 pF
2
TL135 ³
1
C103
10000000 pF
TL122
TL106
TL114
TL101 TL109 TL124
C101
10 pF
TL103 TL126 TL129 TL102
TL111
2
TL136 ³
1
C104
10000000 pF
2
TL134 ³
1
C106
2200000 pF
C102
8.2 pF
TL104 2
1
3
4
TL119
TL125
TL133
2
TL132 ³
1
TL120
TL116
R102
10 Ohm
TL117
TL107
3
2
1
TL123 TL105
b192503efl_bdin_08-23-2010
TL131
TL130
GATE DUT
(Pin G)
Reference circuit input schematic for ƒ = 1990 MHz
Data Sheet
7 of 15
Rev. 09.1, 2016-06-13