PTFB192503EFL Datasheet, PDF (1/15 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs

PTFB192503EL
PTFB192503FL
Thermally-Enhanced High Power RF LDMOS FETs
240 W, 1930 – 1990 MHz
Description
The PTFB192503EL and PTFB192503FL are 240-watt LDMOS
FETs intended for use in multi-standard cellular power amplifier
applications in the 1930 to 1990 MHz frequency band. Features
include input and output matching, high gain, wide signal
bandwidth and reduced memory effects for improved DPD
correctability. Manufactured with Infineon's advanced LDMOS
process, these devices provide excellent thermal performance
and superior reliability.
PTFB192503EL
Package H-33288-6
PTFB192503FL
Package H-34288-4/2
Two-carrier WCDMA 3GPP
V_DD = 30 V, I_DQ = 1.85 A, ƒ = 1990 MHz
3GPP WCDMA, PAR = 8:1,
10 MHz carrier spacing BW 3.84MHz
20
50
19
Gain
40
18
30
17
20
Efficiency
16
10
15
0
33 35 37 39 41 43 45 47 49
Output Power (dBm)
Features
• Broadband internal input and output matching
• Enhanced for use in DPD error correction systems
• Typical two-carrier WCDMA performance, 30 V,
1990 MHz
- Average output power = 50 W
- Linear gain = 19 dB
- Drain efficiency = 28 %
- Intermodulation distortion = –35 dBc
• Typical CW performance, 1990 MHz, 30 V
- Output power at P_1dB = 240 W
- Efficiency = 55%
• Increased negative gate-source voltage range for
improved performance in Doherty peaking
amplifiers
• Integrated ESD protection. Human Body Model,
Class 2 (minimum)
• Capable of handling 10:1 VSWR @ 30 V, 240 W
(CW) output power
• Pb-free, RoHS-compliant
RF Characteristics
Two-carrier WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test
fixture)
V_DD = 30 V, I_DQ = 1.9 A, P_OUT = 50 W average, ƒ₁ = 1980 MHz, ƒ₂ = 1990 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8:1 dB @ 0.01% CCDF
Characteristic
Symbol Min Typ
Max
Unit
Gain
Drain Efficiency
G_ps
—
19
—
dB
hD
—
28
—
%
Intermodulation Distortion
IMD
—
–35
—
dBc
All published data at T_CASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 15
Rev. 09.1, 2016-06-13