PTFB192503EFL Datasheet, PDF (14/15 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs

PTFB192503EL
PTFB192503FL
Package Outline Specifications (cont.)
Package H-34288-4/2
45° X 2.032
[45° X .080]
22.860
[.900]
2X 30°
V
CL
D
V
2X 5.080
[.200]
2X 1.143
[.045]
4.889±.510
[.192±.020]
CL
4X
R0.508
+.381
-.127
[^{R.020+-.0.00155} ]
G
2X 12.700
[.500]
22.352±.200
[.880±.008]
9.398
[.370]
9.779
[.385]
19.558±.510
[.770±.020]
4.039
+.254
-.127
[^{.159+-.0.00150}]
1.575
[.062] (SPH)
1.016
[.040]
H-34288-4/2_po_03_08-13-2012
CL
23.114
[.910]
S

Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
Diagram No₃t_.es_A—_llu_tn_ol_le_es_ras_no_ct_eh_ser_±w₀is_.1e₂s₇p_[e₀c_.0if₀ie₅d_]:_{unless specified otherwise.}
1.
2.
IP₄₅nr_..tiemr_PLpa_eirr_ney_ast_dd:di_Dtmihm_i–ecen_kdn_nsrsi_eaoiosinnn_ss;:s_G0aa.r1n_–e0d_gm+t_aom_t0l_ee._.;r_0ASa_5lnt1e–c_{/re–sns0oa.utp0er}e_2cdr5eiA;mmVSe_mM_{–nsE[V0ioD}Y_.nD01s₀4_{4a.5r+eM0i-n.}1_{0c90h92e4/s–}.._{0.001 inch].}
3. A₆l_.l to_Gle_or_la_dn_pc_le_as_tin±_g0_t._h1_i2_ck7_n[_e.0_s0_s5_: ]₀u_.2n₅le_mss_ics_rop_nec_[1ifi₀ed_mo_ict_rh_oe_inrw_chis_]e_m. _ax.
4. Pins: D = drain; S = source; G = gate; V = V_DD.
5. Lead thickness: 0.10 + 0.051/–0.025 mm [.004 +0.002/–0.001 inch].
6. Gold plating thickness: 0.25 micron [10 microinch] max.
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http://www.infineon.com/rfpower
Data Sheet
14 of 15
Rev. 09.1, 2016-06-13