PTFB192503EFL Datasheet, PDF (6/15 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs

Nornalized to 50 Ohms
Broadband Circuit Impedance
Z Source
D
Z Load
G
S
Frequency
MHz
1900
1930
1960
1990
2020
Z Source W
R
jX
2.63
–3.92
2.56
–3.67
2.48
–3.44
2.42
–3.21
2.35
–2.98
Z Load W
R
jX
1.36
–4.49
1.33
–4.35
1.31
–4.21
1.28
–4.07
1.26
–3.93
See next page for reference circuit information
PTFB192503EL
PTFB192503FL
Z₀ = 50 Ω
2020 MHz
Z Load
0.1
Z Source
1900 MHz
0.2
0.3
0.4
Data Sheet
6 of 15
Rev. 09.1, 2016-06-13