PTFB093608FV Datasheet, PDF (7/13 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

PTFB093608_OUTPUT
PTFB093608FV
Reference Circuit (cont.)
GATE DUT
(Pin G1)
GATE DUT
(Pin G2)
C219
10000000 pF
2
TL224 ³
1
C218
10000000 pF
TL223
3
1
2
C217
4710000 pF
TL241
TL240
3
1
2
TL225
C209
4.7 pF
C207
3.3 pF
C216
4710000 pF
TL239
3
1
2
C215
100000000 pF
TL238
TL237
3
1
2
TL236
C202
1.8 pF
TL261
C221
2.2 pF
TL245
TL233
2
3
1
3
1
2
TL244
TL213
TL262
TL212
DCVS
V1
DRAIN DUT ^{TL221 TL226}
3
(Pin D1)
1
2
TL214
TL234
3
1
2
TL209 TL231 TL208 TL230 TL207 TL260
DRAIN DUT
(Pin D2)
TL205
TL203
1
2
3
C222
4.7 pF
TL206 TL204
1
2
3
C208
3.3 pF
TL215 TL229
TL216
TL232 TL217 TL264
C220
2.2 pF
TL243
TL242
2
3
1
TL263
TL211 TL227 TL220
2
1
3
C205
56 pF
TL202 2
3
1
TL253 TL201 2
3
1
4
C206
56 pF
4
C201
3.3 pF
TL258 TL219 TL228
3
1
2
TL254
TL218
TL235
1
TL250 3
2
C214
10000000 pF
TL249
1
2
3
C213
10000000 pF
TL222
TL248
TL247
1
2
3
1
2
3
C211
4710000 pF
C210
4710000 pF
TL255
TL257
TL256
2
1
3
C204
1.8 pF
TL252
TL246
1
2
3
C212
100000000 pF
TL259
TL251
b093608fv_bdout_06-22-2011
DCVS
V2
TL210
RF_OUT
er = 3.48
H = 20 mil
RO/RO4350B1
Reference circuit output schematic for ƒ = 960 MHz
Data Sheet
7 of 13
Rev. 04, 2012-07-24