PTFB093608FV Datasheet, PDF (12/13 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

PTFB093608FV
Package Outline Specifications
Package H-34275G-6/2
2X D 45° x .64
[.025]
2X 30°
6X 4.04±0.51
[.159±.020]
V1 D1
(13.72
[.540])
30.61
[1.205]
2X (1.27
[.050])
CL
D2
2X 2.22
[.087]
2X 2.29
[.090]
V2
10.16
[.400]
CL
(18.24
[.718])

4X R0.51+-.1.338
[
R.020
] ^+.015
-.005
4.57+-00.1.235
[^{.180+-.0.00150}]
SPH 2.134
[.084]
G1
CL
2X 26.16
[1.030]
G2
CL
4X 12.45
[.490]
31.24±0.28
[1.230±.011]
CL
1.63
[0.064]
H-34275G-6/2_sl_po_07-24-2012
32.26
S
[1.270]
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ±0.127 [0.005] unless specified otherwise.
4. Pins: G1, G2 = gate; D1, D2 = drain; S = source; V1, V2 = V_DD
5. Lead thickness: 0.13 +0.051/–0.025 mm [.005 +.002/–.001 inch].
6. Gold plating thickness: 0.25 micron [10 microinch] max.
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet
12 of 13
Rev. 04, 2012-07-24