PTFB093608FV Datasheet, PDF (2/13 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

PTFB093608FV
RF Characteristics (cont.)
Two-tone Specifications (not subject to production test–verified by design/characterization in Infineon test fixture)
V_DD = 28 V, I_DQ = 2.8 A, P_OUT = 315 W PEP, ƒ = 960 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol Min Typ
G_ps
—
20
hD
—
42
IMD
—
–30
Max
—
—
—
Unit
dB
%
dBc
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current

On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V_GS = 0 V, I_DS = 10 mA
V_DS = 28 V, V_GS = 0 V
V_DS = 63 V, V_GS = 0 V
V_GS = 10 V, V_DS = 0.1 V
V_DS = 28 V, I_DQ = 2.8 A
V_GS = 10 V, V_DS = 0 V
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C, 360 W CW)
Ordering Information
Type and Version
PTFB093608FV V2
PTFB093608FV V2 R250
Order Code
PTFB093608FVV2XWSA1
PTFB093608FVV2R250XTMA1
Symbol
V_(BR)DSS
I_DSS
I_DSS
R_DS(on)
V_GS
I_GSS
Min
65
—
—
—
2.5
—
Typ
—
—
—
0.05
3.9
—
Max
—
1.0
10.0
—
4.5
1.0
Unit
V
µA
µA
W
V
µA
Symbol Value
V_DSS
V_GS
T_J
T_STG
R_qJC
65
–6 to +10
200
–40 to +150
0.12
Unit
V
V
°C
°C
°C/W
Package and Description
H-34275G-6/2, earless flange
H-34275G-6/2, earless flange
Shipping
Tray
Tape & Reel, 250 pcs
Data Sheet
2 of 13
Rev. 04, 2012-07-24