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PTFB093608FV Datasheet, PDF (1/13 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET | |||
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PTFB093608FV
Thermally-Enhanced High Power RF LDMOS FET
360 W, 28 V, 920 â 960 MHz
Description
The PTFB093608FV is a 360 LDMOS FET intended for use in
multi-standard cellular power amplifier applications in the 920 to 960
MHz frequency band. Features include input and output matching,
high gain and thermally-enhanced package with earless flange.
Manufactured with Infineonâs advanced LDMOS process, this device
provides excellent thermal performance and superior reliability.
PTFB093608FV
Package H-34275G-6/2
Two-carrier WCDMA 3GPP Drive Up
VDD = 28 V, IDQ = 2.8 A, Æ = 960 MHz,
3GPP WCDMA, PAR = 8 dB,
10 MHz carrier spacing, BW 3.84 MHz
21.0
60
20.5
50
20.0
40
Gain
19.5
30
19.0
20
18.5
18.0
35
Efficiency
40
45
50
Output Power Avg. (dBm)
10
0
55
Features
⢠Broadband internal matching
⢠Enhanced for use in DPD error correction systems
and Doherty applications
⢠Wide video bandwidth
⢠Typical two-carrier WCDMA performance,
960 MHz, 28 V
- Average output power = 160 W
- Gain = 19 dB
- Efficiency = 40%
⢠Integrated ESD protection
⢠Low thermal resistance
⢠Capable of handling 10:1 VSWR @ 32 V, 960 MHz,
+3 dB input overdrive = 500 W (CW) output power
⢠Pb-Free and RoHS compliant
RF Characteristics
Single-carrier WCDMA Specifications (tested in Infineon test fixture)
VDD = 28 V, IDQ = 2.8 A, POUT = 112 W average, Æ = 960 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, PAR = 10 dB @
0.01% CCDF probability
Characteristic
Symbol Min Typ Max Unit
Gain
Drain Efficiency
Gps
18
20
â
dB
hD
33.5
34
â
%
Adjacent Channel Power Ratio
ACPR
â
â36
â31
dBc
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive deviceâobserve handling precautions!
Data Sheet
1 of 13
Rev. 04, 2012-07-24
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