PTFB093608FV Datasheet, PDF (4/13 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

PTFB093608FV
Typical Performance (cont.)
Two-carrier WCDMA 3GPP Drive-up
V_DD = 28 V, I_DQ = 2.8 A, 3GPP WCDMA,
PAR = 8 dB, 10 MHz carrier spacing,
BW 3.84 MHz
-20
960 Lower
-25
960 Upper
940 Lower
-30
940 Upper
920 Lower
920 Upper
-35
-40
IMD Low
-45
-50
IMD Up
-55
36 38 40 42 44 46 48 50 52 54
Output Power Avg. (dBm)
Two-carrier WCDMA 3GPP Drive-up
V_DD = 28 V, I_DQ = 2.8 A, ƒ = 960 MHz,
3GPP WCDMA, PAR = 8 dB,
10 MHz carrier spacing, BW 3.84 MHz
-10
50
Efficiency
-20
40
IMD Up
-30
30
IMD Low
-40
ACPR ²⁰
-50
10
-60
35
40
45
50
Output Power Avg. (dBm)
0
55
Broadband Circuit Impedance
Data Sheet
Z Source
G
G
D ^{Z Load}
S
D
Frequency
MHz
910
920
930
940
950
960
970
Z Source W
R
jX
1.84
–1.74
1.78
–1.73
1.72
–1.72
1.66
–1.71
1.61
–1.69
1.55
–1.66
1.50
–1.64
4 of 13
Z Load W
R
jX
0.89
–1.52
0.86
–1.46
0.83
–1.40
0.81
–1.35
0.79
–1.29
0.77
–1.23
0.75
–1.17
Rev. 04, 2012-07-24