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PTFA241301FV1 Datasheet, PDF (7/12 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420 – 2480 MHz
PTFA241301E
PTFA241301F
Reference Circuit
C0.1001µF
R2
1.3K V
R1
1.2K V
QQ1
LM7805
Q1
VDD
BCP56
C2
0.001µF
C3
0.001µF
R2K3 V
R2K4 V
R F_IN
R5.51K V
C4
10 µF
35V
R6
10V
C5
0.1µF
R7
C6
5.1K V 4.5pF
l6
C7
4. 5p F
l1
l2
l3
C8
0.9pF
l4
C9
1.0pF
l5 l7 l8
L1
C10
C11
4.5pF
1µF
VDD
C12
C13
0.1µF
10µF
50V
l9
C18
DUT
4.5pF
l11 l12
l13
l10
l14
C0.169pF
RF_OUT
C14
4.5pF
L2
C15
1µF
C16
0. 1µF
C17
10µF
50V
A241301e_sch
Reference circuit schematic for ƒ = 2420 MHz
Circuit Assembly Information
DUT
PTFA241301E or PTFA241301F
PCB
0.76 mm [.030”] thick, εr = 4.5
LDMOS Transistor
Rogers TMM4
2 oz. copper
Microstrip
Electrical Characteristics at 2420 MHz1
l1
0.112 λ, 50.0 Ω
l2
0.039 λ, 34.0 Ω
l3
0.045 λ, 34.0 Ω
l4
0.044 λ, 34.0 Ω
l5
0.017 λ, 34.0 Ω
l6
0.307 λ, 60.0 Ω
l7
0.019 λ, 14.7 Ω
l8
0.083 λ, 8.0 Ω
l9, l10
0.237 λ, 50.0 Ω
l11
0.057 λ, 4.3 Ω
l12 (taper)
0.098 λ, 4.3 Ω / 50.0 Ω
l13
0.034 λ, 50.0 Ω
l14
0.164 λ, 50.0 Ω
1Electrical characteristics are rounded.
Dimensions: L x W (mm)
7.52 x 1.37
2.54 x 2.54
2.92 x 2.54
2.87 x 2.54
1.09 x 2.54
21.01 x 0.97
1.17 x 7.62
5.03 x 15.24
16.00 x 1.27
3.43 x 29.85
5.99 x 29.85 / 1.37
2.29 x 1.37
11.13 x 1.37
Dimensions: L x W (in.)
0.296 x 0.054
0.100 x 0.100
0.115 x 0.100
0.113 x 0.100
0.043 x 0.100
0.827 x 0.038
0.046 x 0.300
0.198 x 0.600
0.630 x 0.050
0.135 x 1.175
0.236 x 1.175 / 0.054
0.090 x 0.054
0.438 x 0.054
Data Sheet
7 of 12
Rev. 05, 2007-05-11