PTFA241301FV1 Datasheet, PDF (2/12 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420 – 2480 MHz

PTFA241301E
PTFA241301F
RF Characteristics (cont.)
Two-tone Measurements (tested in Infineon test fixture)
V_DD = 28 V, I_DQ = 1150 mA, P_OUT = 130 W PEP, ƒ = 2420 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol Min Typ
G_ps
13.0
14
η_D
36
38
IMD
—
–30
Max
—
—
–28
Unit
dB
%
dBc
DC Characteristics
Characteristic
Conditions
Symbol Min Typ
Drain-Source Breakdown Voltage V_GS = 0 V, I_DS = 10 mA
V_(BR)DSS
65
—
Drain Leakage Current
V_DS = 28 V, V_GS = 0 V
I_DSS
—
—
V_DS = 63 V, V_GS = 0 V
I_DSS
—
—
On-State Resistance
V_GS = 10 V, V_DS = 0.1 V
R_DS(on)
—
0.07
Operating Gate Voltage
V_DS = 28 V, I_DQ = 1150 mA
V_GS
2
2.4
Gate Leakage Current
V_GS = 10 V, V_DS = 0 V
I_GSS
—
—
Max
—
1.0
10.0
—
3
1.0
Unit
V
µA
µA
Ω
V
µA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C, 130 W CW)
Symbol
V_DSS
V_GS
T_J
P_D
T_STG
R_θJC
Value
65
–0.5 to +12
200
438
2.5
–40 to +150
0.40
Unit
V
V
°C
W
W/°C
°C
°C/W
Ordering Information
Type
PTFA241301E
PTFA241301F
Package Outline
H-30260-2
H-31260-2
Package Description
Thermally-enhanced slotted flange, single-ended
Thermally-enhanced earless flange, single-ended
Marking
PTFA241301E
PTFA241301F
*See Infineon distributor for future availability.
Data Sheet
2 of 12
Rev. 05, 2007-05-11