PTFA241301FV1 Datasheet, PDF (6/12 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420 – 2480 MHz

PTFA241301E
PTFA241301F
Typical Performance (cont.)
CCDF vs. Output Power Peak-to-Average Ratio
V_DD = 28 V, I_DQ = 1.15 A, ƒ = 2400 MHz,
single-carrier 3GPP WCDMA,
TM1, 64 DPCH, PAR = 7.5 dB
100
Source
10
30 dBm
43 dBm
1
43.5 dBm
44 dbm
46 dBm
0.1
48 dBm
0.01
0.001
0 1 23 4 5 67 8 9
Output Power PAR (dB)
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
0.95
-20
0.28 A
0.83 A
1.39 A
2.09 A
4.17 A
6.26 A
8.34 A
10.43 A
12.52 A
0
20 40 60 80 100
Case Temperature (°C)
Broadband Circuit Impedance
Z Source
D
Z Load
G
S
Frequency
MHz
2420
2430
2450
2470
2480
Z Source Ω
R
jX
13.20
4.69
13.30
4.75
13.85
4.94
14.59
5.00
15.01
4.91
Z Load Ω
R
jX
1.35
4.73
1.28
4.80
1.14
4.99
1.06
5.27
1.01
5.43
See next page for circuit information
Z₀ = 50 Ω
Z Load
2480 MHz
2420 MHz
Z Source
2480 MHz
2420 MHz
0.1
Data Sheet
6 of 12
Rev. 05, 2007-05-11