PTFA241301FV1 Datasheet, PDF (3/12 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420 – 2480 MHz

PTFA241301E
PTFA241301F
Typical Performance (data taken in a production test fixture)
Linear Broadband Performance
V_DD = 28 V, I_DQ = 1150 mA, P_OUT, Avg. = 45.5 dBm
20
0
15 Gain
-5
10
-10
5
Return Loss
-15
0
2420
2430
2440 2450 2460
Frequency (MHz)
2470
-20
2480
Broadband CW Performance (at P–1dB)
V_DD = 28 V, I_DQ = 1150 mA
18
53
17
Output Power ⁵²
16
51
15
Efficiency ⁵⁰
14
49
13 _Gain
48
12
2420
2430
2440 2450 2460
Frequency (MHz)
2470
47
2480
Intermodulation Distortion vs. Output Power
(as measured in a broadband circuit)
V_DD = 28 V, I_DQ = 1150 m A,
ƒ₁ = 2449 MHz, ƒ₂ = 2450 MHz
0
-10
-20
3rd Order
-30
5th
-40
7th
-50
-60
-70
-80
36 38 40 42 44 46 48 50 52
Output Power, Avg. (dBm)
Gain & Efficiency vs. Output Power
V_DD = 28 V, I_DQ = 1150 mA, ƒ = 2450 MHz
16
60
15
50
14 ^Gain
40
13
30
12 _Efficiency
20
11
10
10
0
36 38 40 42 44 46 48 50 52
Output Power (dBm)
Data Sheet
3 of 12
Rev. 05, 2007-05-11