PTFA241301FV1 Datasheet, PDF (4/12 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420 – 2480 MHz

Typical Performance (cont.)
Power Sweep
V_DD = 28 V, ƒ = 2450 MHz
15
I_DQ = 1430 mA
14
I_DQ = 1150 mA
13
12 ^{IDQ = 860 mA}
11
37 39 41 43 45 47 49 51 53
Output Power (dBm)
PTFA241301E
PTFA241301F
Output Power (at 1 dB compression)
vs. Supply Voltage
I_DQ = 1150 mA, ƒ = 2450 MHz
52.0
51.5
51.0
50.5
50.0
49.5
49.0
24
26
28
30
32
Supply Voltage (V)
IS-95 CDMA Performance
V_DD = 28 V, I_DQ = 1150 mA, ƒ = 2450 MHz
T_CASE = 25°C
35
T_CASE = 90°C
-40
30
-45
ACP F_C – 0.75 MHz
25
-50
-55
20
-60
15
Efficiency ^-65
10
-70
5
-75
ACP F_C + 1.98 MHz
0
-80
30 32 34 36 38 40 42 44
Output Power, Avg. (dBm)
IM3 vs. Output Power at Selected Biases
V_DD = 28 V, ƒ₁ = 2449, ƒ₂ = 2450 MHz
-20
-25
-30
-35 ^{860 mA}
-40
-45
1430 mA
-50
-55
-60
1150 mA
-65
36 38 40 42 44 46 48 50
Output Power, Avg. (dBm)
Data Sheet
4 of 12
Rev. 05, 2007-05-11