PTFA212001E Datasheet, PDF (7/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 200 W, 2110 – 2170 MHz

Confidential, Limited Internal Distribution
Reference Circuit
PTFA212001E
PTFA212001F
C1
0.001µF
R2
1.3K V
R1
1.2K V
QQ1
LM7805
Q1
V DD
BCP56
C2
0.001µF
C3
0.001µF
RF_IN
R3
2K V
R8
2K V
R5
2K V
l1
l2
C7
8.2pF
C4
4.7µF
16V
R6
5.1K V
C5
0. 1µF
C6
7. 5p F
l8
C9
0. 9p F
l3
l4
l5 l6
l7
C8
0.2pF
l9
R7
5.1K V
C10
4.7µF
16V
C11
0. 1µF
C12
7. 5p F
L1
C13
C14
C15 C16
8.2pF 2.2µF 1µF
1µF
VD D
C17
C18
0.1µF
10µF
50V
l10
C25
DUT
0.4pF
l12
l13
C26
l11
0.4pF
C27
0.5pF
C29
8. 2p F
l14
l15
l16
l17
C28
0.5pF
L2
RF_OUT
C19
C20
C21
C22
8.2pF 2.2µF 1µF
1µF
C23
0.1µF
C24
10µF
50V
Reference circuit schematic for ƒ = 2140 MHz
Circuit Assembly Information
DUT
PTFA212001E or PTFA212001F
PCB
0.76 mm [.030"] thick, ε_r = 3.48
LDMOS Transistor
Rogers RO4350
1 oz. copper
Microstrip
Electrical Characteristics at 2140 MHz¹ Dimensions: L x W (mm)
l1
l2
l3
l4
l5 (taper)
l6
l7
l8, l9
l10, l11
l12
l13 (taper)
l14 (taper)
l15 (taper)
l16
l17
0.042 λ, 50.0 Ω
0.048 λ, 50.0 Ω
0.026 λ, 50.0 Ω
0.059 λ, 50.0 Ω
0.062 λ, 50.0 Ω / 6.9 Ω
0.015 λ, 6.9 Ω
0.028 λ, 6.9 Ω
0.136 λ, 60.0 Ω
0.254 λ, 51.2 Ω
0.071 λ, 5.0 Ω
0.019 λ, 5.0 Ω / 6.8 Ω
0.026 λ, 6.8 Ω / 13.5 Ω
0.026 λ, 13.5 Ω / 40.9 Ω
0.029 λ, 40.9 Ω
0.107 λ, 50.0 Ω
3.56 x 1.68
4.11 x 1.68
2.08 x 1.68
5.03 x 1.68
5.00 x 1.68 / 20.32
1.14 x 20.32
2.16 x 20.32
11.63 x 1.27
21.51 x 1.65
5.49 x 28.83
1.52 x 28.83 / 20.62
2.11 x 20.62 / 9.65
2.06 x 9.65 / 2.34
2.77 x 2.34
9.04 x 1.68
1_{Electrical characteristics are rounded.}
Data Sheet
7 of 11
Dimensions: L x W (in.)
0.140 x 0.066
0.162 x 0.066
0.082 x 0.066
0.198 x 0.066
0.197 x 0.066 / 0.800
0.045 x 0.800
0.085 x 0.800
0.458 x 0.050
0.847 x 0.065
0.216 x 1.135
0.060 x 1.135 / 0.812
0.083 x 0.812 / 0.380
0.081 x 0.380 / 0.092
0.109 x 0.092
0.356 x 0.066
Rev. 05.1, 2009-02-24