PTFA212001E Datasheet, PDF (5/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 200 W, 2110 – 2170 MHz

Confidential, Limited Internal Distribution
Typical Performance (cont.)
Output Peak-to-average Ratio Compression
(PARC) at Various Power Levels
V_DD = 30 V, I_DQ = 1500 mA, ƒ = 2170 MHz,
single-carrier WCDMA input PAR = 7.5 dB
100
10
1
0.1 ^{52 dBm}
48 dBm
46 dBm
Input
50.5 dBm
0.01
50 dBm
0.001
1
2
3
4
5
6
7
8
Peak-to-Average (dB)
PTFA212001E
PTFA212001F
Power Gain vs. Power Sweep (CW)
over Temperature
V_DD = 30 V, I_DQ = 1500 mA, ƒ = 2170 MHz
17
–15°C
16
25°C
15
14 ^85°C
13
12
1
10
100
Output Power (W)
1000
Intermodulation Distortion Products
vs. Tone Spacing
V_DD = 30 V I_DQ = 1600 m A, ƒ = 2140 MHz,
P_OUT = 53 dBm PEP
-15
-20
-25
3rd order
-30
-35
-40
5th
-45
-50
7th
-55
0
10
20
30
40
Tone Spacing (MHz)
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
0.95
-20
0.44 A
1.32 A
2.20 A
3.30 A
6.61 A
9.91 A
13.22 A
16.52 A
0
20
40
60
80 100
Case Temperature (°C)
Data Sheet
5 of 11
Rev. 05.1, 2009-02-24