PTFA212001E Datasheet, PDF (3/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 200 W, 2110 – 2170 MHz

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Maximum Ratings
PTFA212001E
PTFA212001F
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C, 200 W CW)
Symbol
V_DSS
V_GS
T_J
P_D
T_STG
R_θJC
Value
65
–0.5 to +12
200
625
3.57
–40 to +150
0.28
Unit
V
V
°C
W
W/°C
°C
°C/W
Ordering Information
Type and Version
PTFA212001E V4
PTFA212001F V4
Package Type
H-36260-2
H-37260-2
Package Description
Thermally-enhanced slotted flange, single-ended
Thermally-enhanced earless flange, single-ended
Marking
PTFA212001E
PTFA212001F
Typical Performance (data taken in a production test fixture)
Two-carrier WCDMA at Selected Biases
V_DD = 30 V, ƒ = 2140 MHz, 3GPP WCDMA signal,
P/AR = 8 dB, 10 MHz carrier spacing, series show I_DQ
-30
-35
2.0 A
-40
1.4 A
-45
-50
1.8 A
1.6 A
-55
35 37 39 41 43 45 47
Average Output Power (dBm)
Broadband Performance
V_DD = 30 V, I_DQ = 1600 mA, P_OUT = 50.0 dBm
35
Return Loss
30
25
Efficiency
20
15
Gain
10
2050
2090 2130 2170 2210
Frequency (MHz)
-5
-10
-15
-20
-25
-30
-35
2250
*See Infineon distributor for future availability.
Data Sheet
3 of 11
Rev. 05.1, 2009-02-24