PTFA212001E Datasheet, PDF (4/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 200 W, 2110 – 2170 MHz

Confidential, Limited Internal Distribution
Typical Performance (cont.)
Power Sweep, CW Conditions
V_DD = 30 V, I_DQ = 1600 mA, ƒ = 2170 MHz
18 ^{TCASE = 25°C}
60
T_CASE = 90°C
17
50
16
40
Gain
15
30
Efficiency
14
20
13
0
10
40 80 120 160 200 240
Output Power (W)
PTFA212001E
PTFA212001F
Single-carrier WCDMA Drive-up
V_DD = 30 V, I_DQ = 1600 mA, ƒ = 2140 MHz,
3GPP WCDMA signal, TM1 w/16 DPCH, 67% clipping,
P/A R = 8.5 dB, 3.84 MHz BW
-35 ACPR Up
40
ACPR Low
-40
30
Efficiency
-45
20
-50
10
ACPR
-55
0
33 35 37 39 41 43 45 47 49
Average Output Power (dBm)
Voltage Sweep
I_DQ = 1600 mA, ƒ = 2140 MHz,
tone spacing = 1 MHz, P_OUT (PEP) = 53 dBm
-10
50
-15
-20
-25 IM3 Up
-30
-35
-40
45
Efficiency ₄₀
35
30
25
Gain ²⁰
15
-45
10
23
25
27
29
31
33
Supply Voltage (V)
2-Tone Drive-up at Optimum I_DQ
V_DD = 30 V, I_DQ = 1600 mA,
ƒ = 2140 MHz, tone spacing = 1 MHz
-20
-25
-30
Efficiency
-35
-40 ^IM3
-45
-50 ^IM5
-55
-60
-65
IM7
-70
39 41 43 45 47 49 51 53
Output Power, PEP (dBm)
50
45
40
35
30
25
20
15
10
5
0
55
Data Sheet
4 of 11
Rev. 05.1, 2009-02-24