PTFA212001E Datasheet, PDF (2/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 200 W, 2110 – 2170 MHz

PTFA212001E
PTFA212001F
Confidential, Limited Internal Distribution
RF Characteristics
WCDMA Measurements (tested in Infineon test fixture)
V_DD = 30 V, I_DQ = 1.6 A, P_OUT = 50 W average
ƒ₁ = 2135 MHz, ƒ₂ = 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF
Characteristic
Symbol Min Typ
Max
Gain
G_ps
15.3 15.8
—
Drain Efficiency
η_D
26.5
28
—
Intermodulation Distortion
IMD
—
–35.5
–34
Unit
dB
%
dBc
Two-tone Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
V_DD = 30 V, I_DQ = 1.6 A, P_OUT = 200 W PEP, ƒ = 2140 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol Min Typ
G_ps
—
15.8
η_D
—
38.5
IMD
—
–28
Max
—
—
—
Unit
dB
%
dBc
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V_GS = 0 V, I_DS = 10 mA
V_DS = 30 V, V_GS = 0 V
V_DS = 63 V, V_GS = 0 V
V_GS = 10 V, V_DS = 0.1 V
V_DS = 30 V, I_DQ = 1.6 A
V_GS = 10 V, V_DS = 0 V
Symbol
V_(BR)DSS
I_DSS
I_DSS
R_DS(on)
V_GS
I_GSS
Min
65
—
—
—
2.0
—
Typ
—
—
—
0.05
2.5
—
Max
—
1.0
10.0
—
3.0
1.0
Unit
V
µA
µA
Ω
V
µA
Data Sheet
2 of 11
Rev. 05.1, 2009-02-24