PTFA192001E Datasheet, PDF (7/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 200 W, 1930-1990 MHz

Confidential, Limited Internal Distribution
Reference Circuit
PTFA192001E
PTFA192001F
VDD
2K V 2K V 2K V
R5 R8 R3
0.001µF
C3
C0.0201µF
LM7805
QQ1
1.2K V
R1
0.001µF
C1
B C P56
Q1
1.3K V
R2
C4
4.7µF
16V
R6
5.1K V
C5
0.1µF
C6
10pF
L1
VDD
C11
C12 ^C13
C14
C15
C16
10pF 1µF 1µF
2.2µF
0.1µF
10µF
50V
RF_IN
l7
C7
10pF
l1
l2
l3
l4 l5
l6
C8
4.7µF
16V
l8
R7
5.1K V
C9
0.1µF
C10
10pF
l9
DUT
C23
0.7pF
l11
l12
l13
C25
0.7pF
l14
l15
C28
10pF
l16
l17
C24
l10
0.7pF
C26
0.7pF
L2
C27
0.7pF
C17 C18 C19
10pF 1µF 1µF
C20
2.2µF
C21
0.1µF
C22
10µF
50V
RF_OUT
Reference circuit schematic for ƒ = 1960 MHz
Circuit Assembly Information
DUT
PTFA192001E or PTFA192001F
PCB
0.76 mm [.030"] thick, εr = 3.48
LDMOS Transistor
Rogers RO4350
1 oz. copper
Microstrip
Electrical Characteristics at 1960 MHz¹
l1
l2
l3
l4 (taper)
l5
l6
l7, l8
l9, l10
l11
l12 (taper)
l13 (taper)
l14 (taper)
l15
l16
l17
0.038 λ, 50.0 Ω
0.071 λ, 50.0 Ω
0.022 λ, 43.0 Ω
0.060 λ, 43.0 Ω / 6.9 Ω
0.040 λ, 6.9 Ω
0.026 λ, 6.9 Ω
0.123 λ, 60.0 Ω
0.258 λ, 50.9 Ω
0.067 λ, 5.0 Ω
0.017 λ, 5.0 Ω / 7.2 Ω
0.024 λ, 7.2 Ω / 12.3 Ω
0.019 λ, 12.3 Ω / 41 Ω
0.009 λ, 41.0 Ω
0.021 λ, 41.0 Ω
0.096 λ, 50.0 Ω
1_{Electrical characteristics are rounded.}
Dimensions: L x W ( mm)
3.51 x 1.70
6.60 x 1.70
2.01 x 2.16
5.28 x 2.16 / 20.32
3.33 x 20.32
2.21 x 20.32
11.48 x 1.24
23.88 x 1.65
5.59 x 28.91
1.42 x 28.91 / 19.51
2.08 x 19.51 / 10.67
1.78 x 10.67 / 2.29
0.79 x 2.29
1.85 x 2.29
8.99 x 1.70
Dimensions: L x W (in.)
0.138 x 0.067
0.260 x 0.067
0.079 x 0.085
0.208 x 0.085 / 0.800
0.131 x 0.800
0.087 x 0.800
0.452 x 0.049
0.940 x 0.065
0.220 x 1.138
0.056 x 1.138 / 0.768
0.082 x 0.768 / 0.420
0.070 x 0.420 / 0.090
0.031 x 0.090
0.073 x 0.090
0.354 x 0.067
Data Sheet
7 of 11
Rev. 05, 2008-05-15