PTFA192001E Datasheet, PDF (3/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 200 W, 1930-1990 MHz

PTFA192001E
PTFA192001F
Confidential, Limited Internal Distribution
Ordering Information
Type and Version
PTFA192001E V4
PTFA192001F V4
Package Type
H-36260-2
H-37260-2
Package Description
Thermally-enhanced slotted flange, single-ended
Thermally-enhanced earless flange, single-ended
Marking
PTFA192001E
PTFA192001F
Typical Performance (data taken in a production test fixture)
Intermodulation Distortion Products v. Output Power
V_DD = 30 V, I_DQ = 1600 mA,
ƒ₁ = 1957.5 MHz, ƒ₂ = 1962.5 MHz
-20
Up
Low
-30
IM3
IM5
-40
-50
-60
10
IM7
100
Output Power, PEP (W)
1000
Broadband Performance
V_DD = 30 V, I_DQ = 1600 mA, P_OUT = 50 W
40
-5
Return Loss
35
-10
30
-15
25 _Efficiency
-20
20
-25
15
Gain
10
1860 1890
1920
1950
1980
2010
-30
-35
2040
Frequency (MHz)
*See Infineon distributor for future availability.
Data Sheet
3 of 11
Rev. 05, 2008-05-15