PTFA192001E Datasheet, PDF (4/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 200 W, 1930-1990 MHz

Confidential, Limited Internal Distribution
Typical Performance (cont.)
Power Sweep, CW Conditions
V_DD = 30 V, I_DQ = 1800 mA, ƒ = 1990 MHz
17
65
16
55
Gain
15
45
14
13
12
0
35
T_CASE = 25°C
25
Efficiency T_CASE = 90°C
15
40 80 120 160 200 240
Output Power (W)
PTFA192001E
PTFA192001F
Intermodulation Distortion Products
vs. Tone Spacing
V_DD = 30 V I_DQ = 1800 m A , ƒ = 1960 MHz,
P_OUT = 53 dBm PEP
-20
-25
-30
3rd Order
-35
-40
5th
-45
-50
7th
-55
0
5 10 15 20 25 30 35 40
Tone Spacing (MHz)
2-Tone Drive-up
V_DD = 30 V, I_DQ = 1600 m A,
ƒ = 1960 MHz, tone spacing = 1 MHz
-25
-30
-35
-40
-45
-50
-55
-60
42
45
40
Efficiency
IM3
35
IM5 ³⁰
25
IM7
20
15
44 46 48 50 52 54
Output Power, PEP (dBm)
10
56
Two-carrier WCDMA at Selected Biases
V_DD = 30 V, ƒ = 1960 MHz, 3GPP WCDMA signal,
P/AR = 8 dB, 10 MHz carrier spacing, series show I_DQ
-30
2.2 A
-35
2.0 A
1.8 A
-40
-45
1.4 A
-50
1.6 A
-55
34 36 38 40 42 44 46
Output Power, PEP (dBm)
Data Sheet
4 of 11
Rev. 05, 2008-05-15