PTFA192001E Datasheet, PDF (5/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 200 W, 1930-1990 MHz

Confidential, Limited Internal Distribution
Typical Performance (cont.)
Output Peak-to-Average Ratio Compression
(PARC) at various Power levels
V_DD = 30 V, I_DQ = 1500 m A, ƒ = 1990 MHz,
single-carrier WCDMA input PAR = 7.5 dB
100
10
48 dBm
1
0.1 ^{52 dBm}
50.5 dBm
0.01
46 dBm
Input
50 dBm
0.001
1 234 5678
Peak-to-Average (dB)
PTFA192001E
PTFA192001F
Power Gain vs. Power Sweep (CW) over
Temperature
V_DD = 30 V, I_DQ = 1500 m A, ƒ = 1990 MHz
18
-15C
17
25C
16
15 ^85C
14
13
12
1
10
100
Output Power (W)
1000
Voltage Sweep
I_DQ = 1800 mA, ƒ = 1960 MHz, tone spacing = 1 MHz,
Output Power (PEP) = 53 dBm
-10
50
-20
40
Efficiency
-30
IM3 Up
30
-40
-50
23
20
Gain
10
25
27
29
31
33
Supply Voltage (V)
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
0.95
-20
0.44 A
1.32 A
2.20 A
3.30 A
6.61 A
9.91 A
13.22 A
16.52 A
0
20 40 60 80 100
Case Temperature (°C)
Data Sheet
5 of 11
Rev. 05, 2008-05-15