PTFA192001E Datasheet, PDF (10/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 200 W, 1930-1990 MHz

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Package Outline Specifications (cont.)
Package H-37260-2
45° X 2.031
[.080]
2X 12.70
[.500]
CL
D
4.83±0.50
[.190±.020]
PTFA192001E
PTFA192001F
13.72
[.540]
LID 13.21 ^+0.10
–0.15
[.520
+.004
–.006
]
CL
23.37±0.51
[.920±.020]
G
LID 22.35±0.23
[.880±.009]
4X
R0.508
+0.381
–0.127
[R.020
+.015
–.005
]
1.02
[.040]
4.11±0.38
[.162±.015]
S
FLANGE 23.11
[.910]
SPH 1.57
[.062]
0.0381 [.0015] -A-
h - 3 6 + 3 7 2 6 0 - 2 _ 3 7 2 6 0 0/ 4 - 2 5 - 0 8
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Pins: D = drain, S = source, G = gate.
3. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
4. Gold plating thickness:
S, D, G - flange & leads: 1.14 ± 0.38 micron [45 ± 15 microinch]
5. All tolerances ± 0.25 [0.01] / ± 0.127 [.005] unless specified otherwise.
6. Primary dimensions are mm. Alternate dimensions are inches.
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http://www.infineon.com/rfpower
Data Sheet
10 of 11
Rev. 05, 2008-05-15