PTFA092201EF Datasheet, PDF (7/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs

PTFA092201E
PTFA092201F
Reference Circuit
C1
0.001µF
R2
1.3K V
R1
1.2K V
QQ1
LM7805
Q1
VDD
BCP56
C2
0.001µF
C3
0.001µF
R3
2K V
R4
2K V
R5
10 V
C4
10µF
35V
C5
0.1µF
R6
5.1K V
C6
R7
1µF
5.1K V
C7
33pF
l6
L1
C11 C12
33pF 1µF
C13
10µF
50V
C14
100µF
50V
VDD
C15
C16
0.1µF 10µF
50V
RF_IN
C8
33pF
l1
l2
l3
l4
R8
l7
10 V
DUT
C23
2.6pF
C25
33pF
l5
l9
l10
l11 l12
l13
C9
C10
3.9pF
4.9pF
l8
C24
2.6pF
L2
RF_OUT
C17 C18
33pF 1µF
C19
10µF
50V
C20
100µF
50V
C21
0.1µF
C22
10µF
50V
Reference circuit block diagram for ƒ = 960 MHz
Circuit Assembly Information
DUT
PCB
PTFA092201E or PTFA092201F
0.76 mm [.030"] thick, ε_r = 3.48
LDMOS Transistor
Rogers RO4350
1 oz. copper
Microstrip Electrical Characteristics at 960 MHz¹
l1
0.068 λ, 52.0 Ω
l2
0.041 λ, 38.0 Ω
l3
0.040 λ, 38.0 Ω
l4
0.092 λ, 7.8 Ω
l5
0.025 λ, 7.8 Ω
l6
0.208 λ, 78.3 Ω
l7, l8
0.200 λ, 60.1 Ω
l9
0.102 λ, 8.4 Ω
l10 (taper)
0.021 λ, 8.4 Ω / 10.1 Ω
l11 (taper)
0.094 λ, 10.1 Ω / 37.7 Ω
l12
0.022 λ, 37.0 Ω
l13
0.035 λ, 52.0 Ω
1_{Electrical characteristics are rounded.}
Dimensions: L x W (mm)
12.78 x 1.60
7.57 x 2.54
7.34 x 2.54
15.95 x 17.83
4.29 x 17.83
40.64 x 0.74
40.64 x 1.24
17.65 x 16.48
3.56 x 16.48 / 13.36
16.38 x 13.36 / 2.64
4.04 x 2.64
6.55 x 1.60
Dimensions: L x W (in.)
0.503 x 0.063
0.298 x 0.100
0.289 x 0.100
0.628 x 0.702
0.169 x 0.702
1.600 x 0.029
1.500 x 0.049
0.695 x 0.649
0.140 x 0.649 / 0.526
0.645 x 0.526 / 0.104
0.159 x 0.104
0.258 x 0.063
Data Sheet
7 of 11
Rev. 03.2, 2016-06-21