PTFA092201EF Datasheet, PDF (3/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs

PTFA092201E
PTFA092201F
Typical Performance (data taken in a production test fixture)
2-Carrier WCDMA Performance
V_DD = 30 V, I_DQ = 1850 mA, ƒ = 960 MHz, 3GPP WCDMA
signal, P/A R = 8.1 dB, 10 MHz carrier spacing,
3.84 MHz bandwidth
60
-30
T_CASE = 25°C
50 _{TCASE = 90°C}
-35
IMD
40
-40
30
-45
20
-50
10 _ACPR
0
30
35
Efficiency
40
45
Output Power (dBm)
Gain ^-55
-60
50
2-Carrier WCDMA (high gain tune)
V_DD = 30 V, I_DQ = 2000 mA, ƒ = 960 MHz, 3GPP WCDMA
signal, P/A R = 8.1 dB, 10 MHz carrier spacing,
3.84 MHz bandwidth
35
-30
30
25
Gain
20
15 ^IMD
10
ACPR
5
Efficiency
0
30
35
40
45
Output Power (dBm)
-35
-40
-45
-50
-55
-60
50
Two-carrier WCDMA Power Sweep
V_DD = 30 V, I_DQ = 1600 mA, ƒ₁ = 889 MHz, ƒ₂ = 894,
PAR = 7.1 dB each carrier at 0.01% probability
0
35
Efficiency
-10
30
-20
25
-30
20
-40
ACPR ¹⁵
-50
10
-60
0
5
10
20
30
40
50
Output Power (dBm)
Gain & Efficiency vs. Output Power
V_DD = 30 V, I_DQ = 1850 mA, ƒ = 960 MHz
22
21
20
Gain
19
18
17
16
15
30
Efficiency
35
40
45
50
55
Output Power (dBm)
70
60
50
40
30
20
10
0
60
Data Sheet
3 of 11
Rev. 03.2, 2016-06-21