PTFA092201EF Datasheet, PDF (4/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs

Typical Performance (cont.)
CW (high gain tuned)
Gain & Efficiency vs. Output Power
V_DD = 30 V, I_DQ = 2000 mA, ƒ = 960 MHz
22
70
21
60
20
50
Gain
19
40
18
30
17
20
16
Efficiency
10
15
0
30
35
40
45
50
55
60
Output Power (dBm)
PTFA092201E
PTFA092201F
2-Tone Broadband Performance
V_DD = 30 V, I_DQ = 1850 mA, P_OUT = 110 W
50
0
45 _Efficiency
40
35
-5
-10
Return Loss
-15
30
-20
25
-25
20
Gain
15
880 900
920 940 960
Frequency (MHz)
-30
-35
980 1000
2-Tone Broadband (tuned for high gain)
V_DD = 30 V, I_DQ = 2000 m A, P_OUT = 80 W
50
0
45
Efficiency
40
35
-5
-10
Return Loss
-15
30
-20
25
-25
20
Gain
15
880 900
920 940 960
Frequency (MHz)
-30
-35
980 1000
Power Sweep, CW
V_DD = 30 V, ƒ = 960 MHz,
series show I_DQ
20
19 ^{2300 mA}
1550 mA
18
1450 mA
17
30
35
40
45
50
55
Output Power (dBm)
Data Sheet
4 of 11
Rev. 03.2, 2016-06-21