PTFA092201EF Datasheet, PDF (1/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs

PTFA092201E
PTFA092201F
Thermally-Enhanced High Power RF LDMOS FETs
220 W, 920 – 960 MHz
Description
The PTFA092201E and PTFA092201F are 220-watt, internally-
matched LDMOS FETs intended for EDGE and WCDMA applications
in the 920 to 960 MHz band. Manufactured with Infineon's advanced
LDMOS process, these devices provide excellent thermal
performance and superior reliability.
PTFA092201E
Package H-36260-2
PTFA092201F
Package H-37260-2
2-Carrier WCDMA Performance
V_DD = 30 V, I_DQ = 1850 mA, ƒ = 960 MHz, 3GPP WCDMA
signal, P/A R = 8.1 dB, 10 MHz carrier spacing,
3.84 MHz bandwidth
60
-30
50
-35
IMD
ACPR
40
-40
30
-45
20
-50
10
0
30
Gain -55
Efficiency
-60
35
40
45
50
Output Power, Avg. (dBm)
RF Characteristics
Features
• Pb-free, RoHS-compliant and thermally-enhanced
packages
• Broadband internal matching
• Typical two-carrier WCDMA performance at
960 MHz, 30 V
- Average output power = 55 W
- Linear Gain = 18.5 dB
- Efficiency = 30%
- Intermodulation distortion = –37 dBc
- Adjacent channel power = –39 dBc
• Typical CW performance, 960 MHz, 30 V
- Output power at P–1dB = 250 W
- Gain = 17.5 dB
- Efficiency = 59%
• Integrated ESD protection: Human Body Model,
Class 2 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 30 V,
220 W (CW) output power
Two-carrier WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test
fixture)
V_DD = 30 V, I_DQ = 1850 mA, P_OUT = 55 W average
ƒ₁ = 950 MHz, ƒ₂ = 960 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8.1 dB @ 0.01% CCDF
Characteristic
Symbol Min Typ
Max
Unit
Intermodulation Distortion
IMD
—
–37
—
dBc
Gain
Drain Efficiency
G_ps
—
18.5
—
dB
η_D
—
30
—
%
All published data at T_CASE = 25 °C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 11
Rev. 03.2, 2016-06-21