PTFA092201EF Datasheet, PDF (5/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs

Typical Performance (cont.)
Intermodulation Distortion vs. Output Power
V_DD = 30 V, I_DQ = 1850 mA, ƒ₁ = 960, ƒ2 = 959 MHz
-20
-30
-40
3rd Order
-50
5th
-60
7th
-70
-80
30
35
40
45
50
55
Output Power, PEP (dBm)
PTFA092201E
PTFA092201F
Intermodulation Distortion vs. Output Power
(high gain tune)
V_DD = 30 V, I_DQ = 2000 mA, ƒ₁ = 859, ƒ₂ = 960 MHz
-20
-30
-40
3rd Order
-50
5th
-60
-70
7th
-80
30
35
40
45
50
55
Output Power, PEP (dBm)
Output Power vs. Supply Voltage
I_DQ = 1850 mA, ƒ = 960 MHz
55
54
53
52
51
24 26 28 30 32 34 36
Supply Voltage (V)
IS-95 CDMA Performance
V_DD = 30 V, I_DQ = 1850 mA, ƒ = 960 MHz
40
-40
Adj 750 kHz
30
-50
20
Efficiency
-60
Alt₁ 1.98 MHz
10
-70
0
-80
25
30
35
40
45
50
Output Power, Avg. (dBm)
Data Sheet
5 of 11
Rev. 03.2, 2016-06-21